INTERFACE DEFECTS AND DISORDER IN A-SI-H A-SINX-H SUPERLATTICES

被引：18

作者：

ROXLO, CB

ABELES, B

PERSANS, PD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1430 / 1434

页数：5

共 20 条

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[3]

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[5]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[6] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].

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GOLDSTEIN, Y .

PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483

[7] TRANSMISSION ELECTRON-MICROSCOPY OF HYDROGENATED AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

DECKMAN, HW ;

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ABELES, B .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :171-173

[8] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS [J].

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PHYSICAL REVIEW B, 1984, 30 (10) :5791-5799

[9]

LANNIN JS, 1984, SEMICONDUCT SEMIMET, V21, P159

[10] PHONONS IN AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

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PHYSICAL REVIEW B, 1985, 31 (08) :5577-5579

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