MORPHOLOGY AND STRUCTURE OF THERMALLY INDUCED MICRODEFECTS IN HIGH-TEMPERATURE TREATED CZOCHRALSKI-SILICON

被引：0
|
作者：
REICHE, M [1 ]
NITZSCHE, W [1 ]
机构：
[1] VEB MIKROELEKTR KARL MARX,DDR-5010 ERFURT,GER DEM REP
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 04期
关键词：
D O I：
10.1002/crat.2170210405
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：461 / 467
页数：7
相关论文
共 50 条
  • [1] STRUCTURE OF THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI SILICON AFTER HIGH-TEMPERATURE ANNEALING
    PONCE, FA
    YAMASHITA, T
    HAHN, S
    APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1051 - 1053
  • [2] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI GROWN SILICON-CRYSTALS
    MATSUSHITA, Y
    OTSUKA, H
    KISHINO, S
    TAKASU, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C354 - C354
  • [3] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    MATSUSHITA, Y
    JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 516 - 525
  • [4] THERMODYNAMIC AND KINETIC CONSIDERATIONS ON THE EQUILIBRIUM SHAPE FOR THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI SILICON
    TILLER, WA
    HAHN, S
    PONCE, FA
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3255 - 3266
  • [5] Bipolar structure in thermally treated czochralski silicon wafer
    Yu, XG
    Yang, DR
    Ma, XY
    Fan, RX
    Que, DL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (03): : 1129 - 1132
  • [6] Bipolar structure in thermally treated Czochralski silicon wafer
    Yu, Xuegong
    Yang, Deren
    Ma, Xiangyang
    Fan, Ruixin
    Que, Duanlin
    Yu, X. (mseyang@dial.zju.edu.cn), 1600, Japan Society of Applied Physics (42): : 1129 - 1132
  • [7] OXYGEN STRIATION AND THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    OHSAWA, A
    HONDA, K
    OHKAWA, S
    SHINOHARA, K
    APPLIED PHYSICS LETTERS, 1980, 37 (02) : 157 - 159
  • [8] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR
    KISHINO, S
    MATSUSHITA, Y
    KANAMORI, M
    IIZUKA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01): : 1 - 12
  • [9] A STUDY ON THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS - DEPENDENCE ON ANNEALING TEMPERATURE AND STARTING MATERIALS
    MATSUSHITA, Y
    KISHINO, S
    KANAMORI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L101 - L104
  • [10] GROWTH-BEHAVIOR OF THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    KISHINO, S
    MATSUSHITA, Y
    KANAMORI, M
    IIZUKA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C118 - C118
12345