Recombination activity of iron-related complexes in silicon studied by temperature dependent carrier lifetime measurements

Carrier recombination centers related with iron complexes in p-type silicon are studied by microwave and light-induced absorption techniques. Both thermal- and photoactivation are used to decompose iron-boron pairs and to study the impact on the recombination lifetime. Due to photodissociation of iron-boron pairs the lifetime increases for high level injection. Efficient recombination occurs via an acceptor level at E(c)-0.29 eV as derived from the temperature dependence of carrier lifetime. (C) 1995 American Institute of Physics.