CURRENT TRANSITION MECHANISM IN THE DIFFUSION P-N-JUNCTIONS ON THE GEXSI1-X SOLID-SOLUTION BASIS

被引：0

作者：

ABDULLAYEV, GB

BAKIROV, MY

MUSTAFAEV, YM

MADATOV, RS

机构：

来源：

IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK | 1982年 / 02期

关键词：

D O I：

暂无

中图分类号：

O1 [数学];

学科分类号：

0701 ; 070101 ;

摘要：

引用

页码：89 / 92

页数：4

共 6 条

[1] KAPAYA P, Patent No. 5591
[2] KURNOSOV AI, 1968, ELEKTRON TEKH 2, P26
[3] SEMICONDUCTOR DEVICES MADE WITH SINGLE CRYSTAL GERMANIUM-SILICON ALLOYS
LOGAN, RA
GOSS, AJ
SCHWARTZ, M
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (12) : 1551 - 1552
[4] SAH CT, 1957, P IRE, V45, P1288
[5] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[6] STAFEEV VI, 1961, FIZ TVERD TELA, V3, P185