EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS

被引：56

作者：

DEXTER, RJ

PICRAUX, ST

WATELSKI, SB

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

[2] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1063/1.1654956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：455 / 457

页数：3

共 16 条

[1]

BALARIN M, 1959, THIN SOLID FILMS, V4, P255

[2]

BALKANSKI M, 1963, J PHYS SOC JAP S18, P37

[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J].

BORDERS, JA ;

PICRAUX, ST ;

BEEZHOLD, W .

[4]

BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[5]

BRICE DK, 1971, 710599 SAND LAB RES

[6]

DEXTER RJ, 1969, THESIS VIRGINIA POLY

[7]

EERNISSE EP, PRIVATE COMMUNICATIO

[8]

Freeman J. H., 1970, European conference on ion implantation, P74

[9]

LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

[10]

PAVLOV PV, 1967, SOV PHYS DOKL, V12, P11