ACTIVE-NITROGEN-DOPED P-TYPE ZNSE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY FOR BLUE-LIGHT-EMITTING DEVICES

Active-nitrogen-doped p-type ZnSe epitaxial layers were grown by gas-source molecular beam epitaxy using H2Se. Electrical properties of the N-doped ZnSe layers changed drastically depending on the growth temperature and the VI/II ratio. With decreasing growth temperature, the net acceptor concentration increased. At the growth temperature of 300-degrees-C, the net acceptor concentration was as high as 1.02 x 10(18) cm-3. Using this technique, p-n junction diodes with an active layer of ZnCdSe/ZnSe multiple quantum wells were fabricated. These diodes emitted clearly visible blue light (477 nm) at room temperature.