GROWTH OF COAL/ALAS/GAAS METAL-SEMICONDUCTOR HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

TANAKA, M ^{[1
]}

SAKAKIBARA, H ^{[1
]}

NISHINAGA, T ^{[1
]}

IKARASHI, N ^{[1
]}

ISHIDA, K ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA 305,JAPAN

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

541 Aluminum and Alloys - 549 Nonferrous Metals and Alloys - 712 Electronic and Thermionic Materials - 714 Electronic Components and Tubes - 931 Classical Physics; Quantum Theory; Relativity - 933 Solid State Physics;

D O I：

10.1016/0039-6028(92)91083-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We study molecular beam epitaxial growth and structural properties of intermetallic compound CoAl on AlAs/GaAs III-V semiconductors, and overgrowth of GaAs/AlAs on very thin CoAl films. By RHEED and X-ray measurements, we investigate the dependence of crystallinity of Co1-xAl(x) epitaxial layers on MBE growth conditions. It is found that the single crystalline CoAl with the epitaxial orientation of CoAl(001)[110] on AlAs(001)[110]/GaAs can be obtained when the Al composition x is 0.5 and growth temperature T(s) is 350-degrees-C. Furthermore, we grow a GaAs/AlAs/CoAl/AlAs/GaAs metal semiconductor heterostructure, in which a very thin CoAl layer is buried in III-V semiconductors. Electrically continuous film with the CoAl thickness of 50 angstrom was obtained. Transmission electron microscopy shows atomically smooth and abrupt metal/semiconductor interfaces.

引用

页码：38 / 42

页数：5

共 6 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES [J].