COMPENSATION MECHANISMS IN GAAS

被引:303
作者
MARTIN, GM [1 ]
FARGES, JP [1 ]
JACOB, G [1 ]
HALLAIS, JP [1 ]
POIBLAUD, G [1 ]
机构
[1] RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
关键词
D O I
10.1063/1.327952
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2840 / 2852
页数:13
相关论文
共 30 条
[1]   ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE [J].
AINSLIE, NG ;
WOODS, JF ;
BLUM, SE .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2391-&
[2]  
BASS SJ, 1966, INT S GAAS, P41
[3]   ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE [J].
BLANC, J ;
WEISBERG, LR .
NATURE, 1961, 192 (479) :155-&
[4]   ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS [J].
BLOOD, P ;
ORTON, JW .
REPORTS ON PROGRESS IN PHYSICS, 1978, 41 (02) :157-257
[5]  
CLEGG B, COMMUNICATION
[6]   THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].
CRONIN, GR ;
HAISTY, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :874-877
[7]   PROPERTIES OF SEMI-INSULATING GAAS [J].
GOOCH, CH ;
HOLEMAN, BR ;
HILSUM, C .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2069-&
[8]   PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS [J].
HAISTY, RW ;
STRATTON, R ;
MEHAL, EW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUL) :829-&
[9]   EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS [J].
HERRING, C .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) :1939-1953
[10]   DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].
HUBER, AM ;
LINH, NT ;
VALLADON, M ;
DEBRUN, JL ;
MARTIN, GM ;
MITONNEAU, A ;
MIRCEA, A .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026