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COMPENSATION MECHANISMS IN GAAS
被引:303
作者
:
MARTIN, GM
论文数:
0
引用数:
0
h-index:
0
机构:
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
MARTIN, GM
[
1
]
FARGES, JP
论文数:
0
引用数:
0
h-index:
0
机构:
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
FARGES, JP
[
1
]
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
JACOB, G
[
1
]
HALLAIS, JP
论文数:
0
引用数:
0
h-index:
0
机构:
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
HALLAIS, JP
[
1
]
POIBLAUD, G
论文数:
0
引用数:
0
h-index:
0
机构:
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
POIBLAUD, G
[
1
]
机构
:
[1]
RADIOTECH COMPELEC,F-14001 CAEN,FRANCE
来源
:
JOURNAL OF APPLIED PHYSICS
|
1980年
/ 51卷
/ 05期
关键词
:
D O I
:
10.1063/1.327952
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2840 / 2852
页数:13
相关论文
共 30 条
[1]
ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE
[J].
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
;
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
;
BLUM, SE
论文数:
0
引用数:
0
h-index:
0
BLUM, SE
.
JOURNAL OF APPLIED PHYSICS,
1962,
33
(07)
:2391
-&
[2]
BASS SJ, 1966, INT S GAAS, P41
[3]
ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
[J].
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
.
NATURE,
1961,
192
(479)
:155
-&
[4]
ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS
[J].
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
ORTON, JW
论文数:
0
引用数:
0
h-index:
0
ORTON, JW
.
REPORTS ON PROGRESS IN PHYSICS,
1978,
41
(02)
:157
-257
[5]
CLEGG B, COMMUNICATION
[6]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
:874
-877
[7]
PROPERTIES OF SEMI-INSULATING GAAS
[J].
GOOCH, CH
论文数:
0
引用数:
0
h-index:
0
GOOCH, CH
;
HOLEMAN, BR
论文数:
0
引用数:
0
h-index:
0
HOLEMAN, BR
;
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
:2069
-&
[8]
PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS
[J].
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
;
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
;
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1962,
23
(JUL)
:829
-&
[9]
EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS
[J].
HERRING, C
论文数:
0
引用数:
0
h-index:
0
HERRING, C
.
JOURNAL OF APPLIED PHYSICS,
1960,
31
(11)
:1939
-1953
[10]
DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
[J].
HUBER, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
HUBER, AM
;
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
LINH, NT
;
VALLADON, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
VALLADON, M
;
DEBRUN, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
DEBRUN, JL
;
MARTIN, GM
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MARTIN, GM
;
MITONNEAU, A
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MITONNEAU, A
;
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MIRCEA, A
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
:4022
-4026
←
1
2
3
→
共 30 条
[1]
ON PREPARATION OF HIGH PURITY GALLIUM ARSENIDE
[J].
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
;
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
;
BLUM, SE
论文数:
0
引用数:
0
h-index:
0
BLUM, SE
.
JOURNAL OF APPLIED PHYSICS,
1962,
33
(07)
:2391
-&
[2]
BASS SJ, 1966, INT S GAAS, P41
[3]
ENERGY-LEVEL MODEL FOR HIGH-RESISTIVITY GALLIUM ARSENIDE
[J].
BLANC, J
论文数:
0
引用数:
0
h-index:
0
BLANC, J
;
WEISBERG, LR
论文数:
0
引用数:
0
h-index:
0
WEISBERG, LR
.
NATURE,
1961,
192
(479)
:155
-&
[4]
ELECTRICAL CHARACTERIZATION OF SEMICONDUCTORS
[J].
BLOOD, P
论文数:
0
引用数:
0
h-index:
0
BLOOD, P
;
ORTON, JW
论文数:
0
引用数:
0
h-index:
0
ORTON, JW
.
REPORTS ON PROGRESS IN PHYSICS,
1978,
41
(02)
:157
-257
[5]
CLEGG B, COMMUNICATION
[6]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
:874
-877
[7]
PROPERTIES OF SEMI-INSULATING GAAS
[J].
GOOCH, CH
论文数:
0
引用数:
0
h-index:
0
GOOCH, CH
;
HOLEMAN, BR
论文数:
0
引用数:
0
h-index:
0
HOLEMAN, BR
;
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
.
JOURNAL OF APPLIED PHYSICS,
1961,
32
:2069
-&
[8]
PREPARATION AND CHARACTERIZATION OF HIGH RESISTIVITY GAAS
[J].
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
;
STRATTON, R
论文数:
0
引用数:
0
h-index:
0
STRATTON, R
;
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1962,
23
(JUL)
:829
-&
[9]
EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS
[J].
HERRING, C
论文数:
0
引用数:
0
h-index:
0
HERRING, C
.
JOURNAL OF APPLIED PHYSICS,
1960,
31
(11)
:1939
-1953
[10]
DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
[J].
HUBER, AM
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
HUBER, AM
;
LINH, NT
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
LINH, NT
;
VALLADON, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
VALLADON, M
;
DEBRUN, JL
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
DEBRUN, JL
;
MARTIN, GM
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MARTIN, GM
;
MITONNEAU, A
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MITONNEAU, A
;
MIRCEA, A
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,SERV CYCLOTRON,F-45045 ORLEANS,FRANCE
MIRCEA, A
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
:4022
-4026
←
1
2
3
→