SEMICONDUCTIVITY AND OPTICAL INTERBAND-TRANSITIONS OF CUV2O6 AND CU2V2O7

被引：16

作者：

BENKO, FA

KOFFYBERG, FP

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1992年 / 70卷 / 2-3期

关键词：

D O I：

10.1139/p92-011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

CuV2O6 and CU2V2O7 are low-mobility n-type semiconductors; at room temperature mu is-approximately-equal-to 10(-7)m2/Vs. From photoelectrochemical measurements optical interband transitions are found at 2.02 and 3.15 eV for indium-doped CUV2O6, and at 1.87 and 2.88 eV for CU2V2O7. In both materials the valence band edge is 6.9 eV below the vacuum level; a qualitative analysis of all data indicates that the upper valence band is made up mainly of oxygen-2p wave functions, as in V2O5.

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页码：99 / 103

页数：5

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