LIQUID-VAPOR DENSITY PROFILE OF HELIUM - AN X-RAY STUDY

被引：67
|
作者：
LURIO, LB
RABEDEAU, TA
PERSHAN, PS
SILVERA, IF
DEUTSCH, M
KOSOWSKY, SD
OCKO, BM
机构：
[1] BAR ILAN UNIV,DEPT PHYS,IL-52100 RAMAT GAN,ISRAEL
[2] HARVARD UNIV,DIV APPL SCI,CAMBRIDGE,MA 02138
[3] BROOKHAVEN NATL LAB,DEPT PHYS,UPTON,NY 11973
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 17期
关键词：
D O I：
10.1103/PhysRevLett.68.2628
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The average liquid-vapor density profiles [rho(z)] of thick He-4 films adsorbed onto a silicon substrate were measured using x-ray reflectivity. The results are well represented by a 90%-10% interfacial width of 9.2 +/- 1 angstrom at 1.13 K which extrapolates to a T = 0 K, 90%-10% interfacial width of 7.6(-2)+1 angstrom. The sensitivity of the measurement to the width, shape, and asymmetry of the density profile is discussed.
引用
收藏
页码：2628 / 2631
页数：4
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