SI3N4-SI ION-SENSITIVE SEMICONDUCTOR ELECTRODE

被引：32
作者：
LAUKS, IR
ZEMEL, JN
机构：
[1] The Moore School of Electrical Engineering, University of Pennsylvania, Philadelphia
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 12期
关键词：
D O I：
10.1109/T-ED.1979.19802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we investigate the suitability of silicon nitride as a pH-sensitive coating in the EIS (electrolyte-insulator-semiconductor) half cell. The admittance of the EIS capacitor is measured at various pH. The role of the nitride as both gate insulator and ion conducting glass is presented. Hysteresis effects ascribed to changes in the depth of ionic penetration in the S13N4 are found to be significant. We conclude that the dual use of the “gate insulator” as both insulator and ion-conducting material does not appear to be the best route for preparing ion-sensitive semiconductor electrodes. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
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页码：1959 / 1964
页数：6
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