ELECTRICAL MEASUREMENT OF THE DOPANT SEGREGATION PROFILE AT THE GRAIN-BOUNDARY IN SILICON BICRYSTALS

被引：5

作者：

BRONIATOWSKI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 09期

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D O I：

10.1063/1.341279

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：4516 / 4525

页数：10

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