INGAASP INP QUANTUM-WELL MODULATORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：47

作者：

TEMKIN, H

GERSHONI, D

PANISH, MB

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 25期

关键词：

D O I：

10.1063/1.97743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1776 / 1778

页数：3

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[1] QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 1010 - 1012
[2] VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD
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[3] IDENTIFYING THE 1ST
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[J]. PHYSICS TODAY, 1985, 38 (12) : 9 - 9
[4] MONOLITHIC INTEGRATION OF INGAASP/INP DFB LASERS AND INGAAS/INAIAS MQW OPTICAL MODULATORS
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[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 242 - 243
[5] LANG D, UNPUB
[6] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
MILLER, DAB
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[J]. PHYSICAL REVIEW B, 1985, 32 (02) : 1043 - 1060
[7] 1.6 GHZ ELECTROABSORPTION LIGHT-MODULATION IN INGAASP/INP DOUBLE HETEROSTRUCTURES WITH STRIP-LOADED PLANAR WAVE-GUIDE
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[J]. ELECTRONICS LETTERS, 1985, 21 (25-2) : 1182 - 1183
[8] OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
PANISH, MB
TEMKIN, H
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CHU, SNG
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 164 - 166
[9] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS
PANISH, MB
TEMKIN, H
SUMSKI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 657 - 665
[10] GAINAS(P) INP QUANTUM WELL STRUCTURES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY
TEMKIN, H
PANISH, MB
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HAMM, RA
VANDENBERG, JM
SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 394 - 396