HIGH-QUALITY, HIGH-RATE SIO2 AND SIN FILMS FORMED BY 400 KHZ BIAS ELECTRON-CYCLOTRON RESONANCE-CHEMICAL VAPOR-DEPOSITION

被引：5
作者：
FUKUDA, T
SAITO, K
OHUE, M
SHIMA, K
MOMMA, N
机构：
[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN
[2] HITACHI LTD,HITACHI WORKS,HITACHI,IBARAKI 317,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 7B期
关键词：
PLASMA; CVD; BIAS-CVD; ECR; EXCITED IONS; SIO2; SIN; HIGH RATE; HIGH QUALITY; SI-H BOND-FREE FILM;
D O I：
10.1143/JJAP.34.L937
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new electron cyclotron resonance (ECR) plasma CVD system is propos:ed to form high-quality SiO2 and SiN films at high rates. The system applies 400 kHz voltages which ions can follow to the substrate. The system efficiently produces, without heating: 1) SiO2 films in which density and Si-O bond strength are equivalent to those of a thermally oxidized (about 1000 degrees C) film for which deposition rate is higher than 1.2 mu m/min and 2) Si-H bond-free SiN films in which density and resistivity are higher than those of films formed by conventional plasma CVD systems and for which deposition rate is higher than 0.8 mu m/min.
引用
收藏
页码：L937 / L940
页数：4
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