REDUCTION OF RADIATION-INDUCED DEGRADATION IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS) WITH GATE OXIDES PREPARED BY REPEATED RAPID THERMAL N2O ANNEALING

Repeated rapid thermal N2O annealing is proposed as a new gate oxide preparation method for n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFET's). It is found that the n-MOSFET's with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N2O-annealed gate oxides.