GROWTH OF STRAIN-BALANCED INASP/INGAP SUPERLATTICES FOR 1.06 MU-M OPTICAL MODULATORS

Using a strain-balanced growth approach, we show that the pseudomorphic InAsP/InGaP multiple quantum well structures, grown by chemical beam epitaxy, have superior material properties for 1.06 mum modulator application when compared to the strained InAsP/InP or the lattice-matched InGaAsP/InP systems. The broadening in absorption edge due to dislocations in the strained system, or composition fluctuations in the lattice-matched system as a consequence of growth temperature instability, can be greatly minimized. A strong reduction in the nonradiative recombination centers in the strain-balanced InAsP/InGaP system has been observed.