NEUTRON DAMAGE EQUIVALENCE IN GAAS

被引：24

作者：

GRIFFIN, PJ

KELLY, JG

LUERA, TF

BARRY, AL

LAZO, MS

机构：

[1] COMMUN RES CTR,OTTAWA K2H 852,ONTARIO,CANADA

[2] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1-MeV neutron damage equivalence methodology and damage function have been developed for GaAs based on a recoil-energy dependent damage efficiency and the displacement kerma. This method, developed using lifetime degradation in GaAs LEDs in a variety of neutron spectra, is also shown to be applicable to carrier removal. A validated methodology, such as this, is required to ensure and evaluate simulation fidelity in the neutron testing of GaAs semiconductors.

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页码：1216 / 1224

页数：9

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