EPITAXIAL-GROWTH OF AL ON (NH4)2SX-TREATED GAAS

被引：7
|
作者：
OIGAWA, H
FAN, JF
NANNICHI, Y
KAWABE, M
机构：
[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 04期
关键词：
(NH[!sub]4[!/sub])[!sub]2[!/sub]S[!sub]x[!/sub]-treatment; AES; Epitaxial growth; GaAs; RHEED; Schottky contact;
D O I：
10.1143/JJAP.29.L544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial growth of Al film on the (NH4)2Sx-treated surface of (100) GaAs was investigated by means of reflection high-energy electron diffraction (RHEED). A single crystal of epitaxial (110) Al film was obtained on the treated surface with heat treatment at 300°C prior to Al deposition, while Al film became polycrystalline without heat treatment. The effect is explained in terms of the alignment of S atoms on GaAs. The (NH4)2Sx-treated surface seems to be useful in the wide range of GaAs processes. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L544 / L547
页数：4
相关论文
共 50 条
  • [1] Epitaxial growth of Al on (NH4)2Sx-treated GaAs
    Oigiwa, Haruhiro, 1600, (29):
  • [2] Distribution of S in (NH4)2Sx-treated GaAs surfaces
    Kim, JW
    Kang, MG
    Park, HH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S152 - S156
  • [3] EPITAXIAL-GROWTH OF ALKALINE-EARTH FLUORIDE FILMS ON HF-TREATED SI AND (NH4)2SX-TREATED GAAS WITHOUT INSITU CLEANING
    HUNG, LS
    BRAUNSTEIN, GH
    BOSWORTH, LA
    APPLIED PHYSICS LETTERS, 1992, 60 (02) : 201 - 203
  • [4] Low-temperature epitaxial growth of CaF2 on (NH4)2Sx-treated GaAs(100) surface
    Shoji, Daisei
    Niwano, Michio
    Miyamoto, Nobuo
    Applied Surface Science, 1997, 117-118 : 443 - 446
  • [5] SYNCHROTRON RADIATION PHOTOEMISSION ANALYSIS FOR (NH4)2SX-TREATED GAAS
    SUGAHARA, H
    OSHIMA, M
    OIGAWA, H
    SHIGEKAWA, H
    NANNICHI, Y
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 4349 - 4353
  • [6] PHOTOLUMINESCENCE STUDIES ON OVER-PASSIVATIONS OF (NH4)2SX-TREATED GAAS
    SHIKATA, S
    HAYASHI, H
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3721 - 3725
  • [7] MOLECULAR-BEAM EPITAXY ON THE (NH4)2SX-TREATED SURFACE OF GAAS
    OIGAWA, H
    KAWABE, M
    FAN, JF
    NANNICHI, Y
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 427 - 432
  • [8] Metal-dependent Schottky barrier height with the (NH4)2Sx-treated GaAs
    Fan, Jia-Fa
    Oigawa, Haruhiro
    Nannichi, Yasuo
    1600, (27):
  • [9] STUDIES ON AN (NH4)2SX-TREATED GAAS SURFACE USING AES, LEELS AND RHEED
    OIGAWA, H
    FAN, JF
    NANNICHI, Y
    ANDO, K
    SAIKI, K
    KOMA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (03): : L340 - L342
  • [10] Annealing effects on (NH4)2Sx-treated GaAs(001) and InP(001) surfaces
    NTT Interdisciplinary Research Lab, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 A (1588-1590):
12345