FORMATION OF PATTERNED TIN OXIDE THIN-FILMS BY ION-BEAM DECOMPOSITION OF METALLOORGANICS

被引：5
作者：
CATALAN, AB
MANTESE, JV
HAMDI, AH
LAUGAL, RCO
MICHELI, AL
机构：
[1] Electrical and Electronics Engineering Department, General Motors Research Laboratories, Warren
来源：
THIN SOLID FILMS | 1990年 / 188卷 / 01期
关键词：
D O I：
10.1016/0040-6090(90)90189-K
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Boron, phosphorus and oxygen ion implantation was used to decompose tin(IV) neodecanoate selectively to form patterned tin oxide thin films on Si/SiO2 and single-crystal LiNbO3 substrates. An implantation dose of 5 × 1014 ions cm-2 at energies above 180 keV rendered the metallo-organic (MO) insoluble to xylene-N-butylacetate, permitting patterning of the MO prior to pyrolysis. Resistivities of 1-2Mω/□ were measured after pyrolysis for 0.25 μm thick patterned film. Linewidths as narrow as 330 μm were formed by this method. © 1990.
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页码：21 / 26
页数：6
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