INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY

被引：52

作者：

KODAMA, K

OZEKI, M

MOCHIZUKI, K

OHTSUKA, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：656 / 657

页数：2

共 9 条

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[6] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

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[7]

Pauling L., 1960, NATURE CHEM BOND

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