LATTICE-PARAMETER MEASUREMENT OF GAAS CRYSTALS USING MONOCHROMATIC SYNCHROTRON RADIATION

被引：10
作者：
USUDA, K [1 ]
YASUAMI, S [1 ]
HIGASHI, Y [1 ]
KAWATA, H [1 ]
ANDO, M [1 ]
机构：
[1] NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期
关键词：
Composition; Crystal; Diffractometer; GaAs; Lattice parameter; Monochromator; Synchrotron radiation;
D O I：
10.1143/JJAP.29.L210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-resolution diffractometer with a monolithic Si monochromator was developed for lattice parameter (d) measurements using synchrotron radiation. The accuracy attained was 5.9×10-6in terms of Δd/d. This degree of accuracy makes it possible to discuss the lattice parameter variation due to composition shifts in GaAs crystals. However, a preliminary study implied that thermally-induced elastic strain affects the lattice parameter more than the material composition shifts for crystals with the 104∼105cm-2order of dislocation density. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L210 / L212
页数：3
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