LATTICE-PARAMETER MEASUREMENT OF GAAS CRYSTALS USING MONOCHROMATIC SYNCHROTRON RADIATION

被引：10

作者：

USUDA, K ^{[1
]}

YASUAMI, S ^{[1
]}

HIGASHI, Y ^{[1
]}

KAWATA, H ^{[1
]}

ANDO, M ^{[1
]}

机构：

[1] NATL LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

Composition; Crystal; Diffractometer; GaAs; Lattice parameter; Monochromator; Synchrotron radiation;

D O I：

10.1143/JJAP.29.L210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-resolution diffractometer with a monolithic Si monochromator was developed for lattice parameter (d) measurements using synchrotron radiation. The accuracy attained was 5.9×10-6in terms of Δd/d. This degree of accuracy makes it possible to discuss the lattice parameter variation due to composition shifts in GaAs crystals. However, a preliminary study implied that thermally-induced elastic strain affects the lattice parameter more than the material composition shifts for crystals with the 104∼105cm-2order of dislocation density. © 1990 IOP Publishing Ltd.

引用

页码：L210 / L212

页数：3