COLOR-CENTER-INDUCED BAND-GAP SHIFT IN YTTRIA-STABILIZED ZIRCONIA

被引：118

作者：

PAIVERNEKER, VR

PETELIN, AN

CROWNE, FJ

NAGLE, DC

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8555

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8555 / 8557

页数：3

共 11 条

[1]

ALEKSANDROV VI, 1984, FIZ TVERD TELA, V26, P799

[2]

ANDERSON PW, 1963, SOLID STATE PHYS, V14, P99

[3] OPTICAL AND ELECTRICAL-PROPERTIES OF YTTRIA STABILIZED ZIRCONIA (YSZ) CRYSTALS [J].

BUCHANAN, RC ;

POPE, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :962-966

[4] ELECTRONIC STATES OF F-TYPE CENTERS IN OXIDE CRYSTALS - A NEW PICTURE [J].

CHOI, S ;

TAKEUCHI, T .

PHYSICAL REVIEW LETTERS, 1983, 50 (19) :1474-1477

[5] BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3 [J].

HAMBERG, I ;

GRANQVIST, CG ;

BERGGREN, KF ;

SERNELIUS, BE ;

ENGSTROM, L .

PHYSICAL REVIEW B, 1984, 30 (06) :3240-3249

[6]

LUTY F, 1963, J PHYS SOC JAPAN S2, V18, P240

[7] OPTICAL-ABSORPTION OF ELECTROLYTICALLY COLORED SINGLE-CRYSTALS OF YTTRIA-STABILIZED ZIRCONIA [J].

NAGLE, D ;

PAIVERNEKER, VR ;

PETELIN, AN ;

GROFF, G .

MATERIALS RESEARCH BULLETIN, 1989, 24 (05) :619-623

[8] SOLID ELECTROLYTES WITH OXYGEN ION CONDUCTION [J].

SUBBARAO, EC ;

MAITI, HS .

SOLID STATE IONICS, 1984, 11 (04) :317-338

[9] BAND-GAP NARROWING IN HEAVILY DOPED SILICON - A COMPARISON OF OPTICAL AND ELECTRICAL DATA [J].

WAGNER, J ;

DELALAMO, JA .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :425-429

[10]

WRIGHT DA, 1973, J MATER SCI, V8, P876, DOI 10.1007/BF02397918

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