SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS

被引：49
|
作者：
CHELGREN, JE
KATZ, W
DELINE, VR
EVANS, CA
BLATTNER, RJ
WILLIAMS, P
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 02期
关键词：
CESIUM AND ALLOYS;
D O I：
10.1116/1.569939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.
引用
收藏
页码：324 / 327
页数：4
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