SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS

Auger electron spectrometry has been used to characterize the atomic cesium concentration left bracket Cs right bracket //a at the surface of cesium ion bombarded silicon and various metal silicides. The Si** minus ion yield was found to be proportional to left bracket Cs right bracket //v**2**. **8**+36**0**. **1. Surface cesium concentration was also found to increase with increasing inverse sputtering yield S** minus **1 of the substrate. Deviations from a linear dependence of left bracket Cs right bracket //v on S** minus **1 are ascribed to differential sputtering effects.