BORON AND BORON-BASED SEMICONDUCTORS

被引:136
作者
GOLIKOVA, OA
机构
[1] A. F. Ioffe-Physico-Technical Institute, Academy of Sciences of the Ussr
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期
关键词
D O I
10.1002/pssa.2210510102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:11 / 40
页数:30
相关论文
共 222 条
  • [1] Adams, 1964, BORON METALLOBORO ED, P233
  • [2] Adirovich E. I., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P12
  • [3] Adirovich E. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P238
  • [4] B-C SYSTEM IN KINETIC FORMATION RANGE - PYROLYTIC FORMATION OF CARBON-RICH B-C PHASES
    AMBERGER, E
    DRUMINSKI, M
    PLOOG, K
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1971, 23 (01): : 43 - +
  • [5] SYNTHESIS OF SINGLE-CRYSTAL BORON PHOSPHIDE
    ANANTHANARAYANAN, KP
    MOHANTY, C
    GIELISSE, PJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) : 63 - 67
  • [6] SOLUBILITIES OF COPPER AND MANGANESE IN BETA-RHOMBOHEDRAL BORON AS DETERMINED IN CUB-28 AND MNB-23 BY SINGLE-CRYSTAL DIFFRACTOMETRY
    ANDERSSON, S
    CALLMER, B
    [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1974, 10 (03) : 219 - 231
  • [7] OPTICAL ABSORPTION ELECTROLUMINESCENCE + BAND GAP OF BP
    ARCHER, RJ
    LOEBNER, EE
    KOYAMA, RY
    LUCAS, RC
    [J]. PHYSICAL REVIEW LETTERS, 1964, 12 (19) : 538 - &
  • [8] ARMAS B, 1972, CR ACAD SCI C CHIM, V274, P1134
  • [9] FABRICATION AND STUDY OF ELECTRICAL-PROPERTIES OF BORON-SILICON COMPOUNDS WITH HIGH BORON CONCENTRATION
    ARMAS, B
    COMBESCURE, C
    DUSSEAU, JM
    LEPETRE, TP
    ROBERT, JL
    PISTOULET, B
    [J]. JOURNAL OF THE LESS-COMMON METALS, 1976, 47 (JUN): : 135 - 140
  • [10] Armington A.F., 1967, J CRYST GROWTH, V1, P47, DOI DOI 10.1016/0022-0248(67)90007-3