LOW-TEMPERATURE SILICON SURFACE CLEANING BY HF ETCHING ULTRAVIOLET OZONE CLEANING (HF/UVOC) METHOD .2. - INSITU UVOC

被引：24

作者：

KANEKO, T

SUEMITSU, M

MIYAMOTO, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.2425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2425 / 2429

页数：5

共 10 条

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[9] THE FORMATION OF HYDROGEN PASSIVATED SILICON SINGLE-CRYSTAL SURFACES USING ULTRAVIOLET CLEANING AND HF ETCHING [J].

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