THERMAL EXPANSION OF SILICON AND ZINE OXIDE (I)

被引：155
作者：
IBACH, H
机构：
[1] Physikalisches Institut, Technischen Hochschule Aachen
来源：
PHYSICA STATUS SOLIDI | 1969年 / 31卷 / 02期
关键词：
D O I：
10.1002/pssb.19690310224
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A new expansion cell for the three‐terminal capacitance method is developed. Length changes in the order of 10−9 cm can be measured at samples of only 4 mm. At first the expansion coefficient of silicon (reference material) is investigated in detail from 20 to 300 °K. The work is completed by interferometric measurements up to 800 °K. The temperature dependence of the expansion coefficient is discussed using the thermal equation of state. Furthermore conclusions are drawn concerning the contributions of different phonon branches and compared to calculations on the basis of well‐known models. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：625 / +
页数：1
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