ADMITTANCE STUDIES OF HYDROGEN-INDUCED STATES AT THE SILICON-SILICON DIOXIDE INTERFACE

The admittance of Pd-thin SiO//2-Si MOSCAP devices was studied as a function of the following variables: temperature, measurement frequency, oxide preparation conditions, applied gate voltage and ambient atmospheres of 100 ppm hydrogen in nitrogen and pure oxygen. Transient current, capacitance and annealing studies were also conducted for many of these variables. It is shown that hydrogen atoms produced by the catalytic action of the Pd on hydrogen molecules can be injected into the oxide-semiconductor interface where they modify the density and capture cross-sections of the hydrogen-induced interfacial states.