CARRIER LIFETIME IN INDIUM ANTIMONIDE

被引：164

作者：

LAFF, RA

FAN, HY

机构：

来源：

PHYSICAL REVIEW | 1961年 / 121卷 / 01期

关键词：

D O I：

10.1103/PhysRev.121.53

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：53 / &

共 14 条

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[3]

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FAN, HY .

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ZITTER, RN .

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[7]

LAFF RA, 1957, B AM PHYS SOC 2, V2, P347

[8] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS [J].

SAH, CT ;

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PHYSICAL REVIEW, 1958, 109 (04) :1103-1115

[9]

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[10] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS [J].

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PHYSICAL REVIEW, 1956, 101 (06) :1713-1725

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