CARRIER LIFETIME IN INDIUM ANTIMONIDE

被引：164

作者：

LAFF, RA

FAN, HY

机构：

来源：

PHYSICAL REVIEW | 1961年 / 121卷 / 01期

关键词：

D O I：

10.1103/PhysRev.121.53

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：53 / &

共 14 条

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[2] ELECTRON IRRADIATION OF INDIUM ANTIMONIDE
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[3] FAN HY, 1958, NUOVO CIM SUPPL, V7, P661
[4] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS - THEORY
GARTNER, W
[J]. PHYSICAL REVIEW, 1957, 105 (03): : 823 - 829
[5] INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE
GOBELI, GW
FAN, HY
[J]. PHYSICAL REVIEW, 1960, 119 (02): : 613 - 620
[6] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB
KURNICK, SW
ZITTER, RN
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 278 - 285
[7] LAFF RA, 1957, B AM PHYS SOC 2, V2, P347
[8] ELECTRON-HOLE RECOMBINATION STATISTICS IN SEMICONDUCTORS THROUGH FLAWS WITH MANY CHARGE CONDITIONS
SAH, CT
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1958, 109 (04): : 1103 - 1115
[9] TAUC J, 1958, J PHYS CHEM SOLIDS, V8, P219
[10] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS
VANROOSBROECK, W
[J]. PHYSICAL REVIEW, 1956, 101 (06): : 1713 - 1725