PHOTOCONDUCTIVITY OF N-TYPE INSB UNDER OPTICAL AND ELECTRIC CARRIER-HEATING CONDITIONS

被引：0
作者：
KOROTIN, VG [1 ]
KRIVONOGOV, SN [1 ]
NASLEDOV, DN [1 ]
SMETANNIKOVA, YS [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST, LENINGRAD, USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1973年 / 7卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：447 / 448
页数：2
相关论文
共 11 条
  • [1] Abakumov V. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P46
  • [2] ABAKUMOV VN, 1971, SOV PHYS SEMICOND+, V5, P39
  • [3] Guseinov E. K., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1776
  • [4] GUSEINOV EK, 1972, SOV PHYS SEMICOND+, V5, P1549
  • [5] KOROTIN VG, 1973, FIZ TEKH POLUPROV, V7, P641
  • [6] ON ELECTRON GAS ENERGY RELAXATION MECHANISMS IN N-TYPE INSB AT HELIUM TEMPERATURES
    LIFSHITS, TM
    OLEINIKOV, AY
    SHULMAN, AY
    [J]. PHYSICA STATUS SOLIDI, 1966, 14 (02): : 511 - +
  • [7] NASLEDOV DN, 1967, FIZ TVERD TELA+, V8, P2282
  • [8] NASLEDOV DN, 1972, P S PHYSICS PLASMA E
  • [9] NASLEDOV DN, 1966, FIZ TVERD TELA, V8, P2853
  • [10] TEMPERATURE DEPENDENCE OF ENERGY RELAXATION TIME IN N-INSB
    WHALEN, JJ
    WESTGATE, CR
    [J]. APPLIED PHYSICS LETTERS, 1969, 15 (09) : 292 - &
12