COMPARISON OF SITE-SPECIFIC DENSITIES OF STATES OF GA AND AS IN CLEAVED AND SPUTTERED GAAS(110) BY MEANS OF AUGER LINE-SHAPES

被引：14
作者：
DAVIS, GD
SAVAGE, DE
LAGALLY, MG
机构：
[1] UNIV WISCONSIN, DEPT MET & MAT ENGN, MADISON, WI 53706 USA
[2] UNIV WISCONSIN, CTR MAT SCI, MADISON, WI 53706 USA
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1981年 / 23卷 / 01期
关键词：
D O I：
10.1016/0368-2048(81)85034-7
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
引用
收藏
页码：25 / 38
页数：14
相关论文
共 47 条
[1]   INTERFACE STATES AT GA-GAAS INTERFACE [J].
BACHRACH, RZ ;
BIANCONI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :525-528
[2]   SURFACE-REACTIONS AND INTERDIFFUSION [J].
BACHRACH, RZ ;
BAUER, RS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153
[3]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[4]   (110) SURFACE-STATES OF GAAS AND MATRIX ELEMENT EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1244-1248
[5]   OXIDATION OF ORDERED AND DISORDERED GAAS(110) [J].
CHYE, PW ;
SU, CY ;
LINDAU, I ;
SKEATH, P ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1191-1194
[6]  
CLEARFIELD HM, UNPUBLISHED
[7]   MEASUREMENT OF VALENCE BAND AUGER-SPECTRA FOR GAAS(110) FROM GA AND AS-CCV TRANSITIONS [J].
DAVIS, GD ;
LAGALLY, MG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1311-1316
[8]   COMPARISON OF SITE-SPECIFIC VALENCE BAND DENSITIES OF STATES DETERMINED FROM AUGER-SPECTRA AND XPS-DETERMINED VALENCE BAND SPECTRA IN GES (001) AND GESE (001) [J].
DAVIS, GD ;
VILJOEN, PE ;
LAGALLY, MG .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 21 (02) :135-152
[9]   DETERMINATION OF SHALLOW CORE LEVEL SPECTRA IN SELECTED COMPOUND SEMICONDUCTORS [J].
DAVIS, GD ;
VILJOEN, PE ;
LAGALLY, MG .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 20 (04) :305-318
[10]  
DAVIS GD, 1981, J VAC SCI TECHNOL, V18
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