COMPARATIVE PHOTOEMISSION-STUDY OF LOW-PRESSURE HYDROGEN, SILANE, AND DISILANE ADSORPTION ON SI(111)7 X 7

被引：21

作者：

KOULMANN, JJ

RINGEISEN, F

ALAOUI, M

BOLMONT, D

机构：

[1] Laboratoire de Physique et de Spectroscopie Lectronique, Institut des Sciences Exactes et Appliquées, Université de Haute-Alsace, 68093 Mulhouse Cedex

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.41.3878

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an in situ study of low-pressure hydrogen, silane, and disilane chemisorption on Si(111) surfaces. Only characteristic signatures of mono and dihydride phases are evidenced. At room temperature sticking of SiH2 or (SiH2)n species for SiH4 and Si2H6, respectively, are proposed and related to the back bonds of the dimeradatomstacking-fault model. © 1990 The American Physical Society.

引用

页码：3878 / 3881

页数：4

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