DETERMINATION OF STRESS IN GAAS/SI MATERIAL

被引：7

作者：

LI, CR

MAI, ZH

CUI, SF

ZHOU, JM

DING, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4767 / 4769

页数：3

共 9 条

[1]

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[2]

CHOI HK, 1985, IEEE ELECTRON DEVICE, V6, P381

[3]

FISHER R, 1985, J APPL PHYS, V58, P374

[4]

FISHER R, 1985, APPL PHYS LETT, V47, P397

[5]

FISHER R, 1984, ELECTRON LETT, V20, P945

[6]

Ge Peiwen, 1988, Proceedings of the International Conference on Materials and Process Characterization for VLSI, 1988 (ICMPC '88), P251

[7] RESIDUAL STRAINS IN AMORPHOUS-SILICON FILMS MEASURED BY X-RAY DOUBLE CRYSTAL TOPOGRAPHY [J].

KUO, CL ;

VANIER, PE ;

BILELLO, JC .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :375-377

[8] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[9] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J].

SHINODA, Y ;

NISHIOKA, T ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L450-L451

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