INTERFACIAL RECOMBINATION IN GAALAS-GAAS HETEROSTRUCTURES

被引：39

作者：

NELSON, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1475 / 1477

页数：3

共 16 条

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[8] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS [J].

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