EFFECTS OF AR+ ANGLE OF INCIDENCE ON THE ETCHING OF SI WITH CL2 AND LOW-ENERGY AR+ IONS

被引：15
|
作者：
VANZWOL, J
VANLAAR, J
KOLFSCHOTEN, AW
DIELEMAN, J
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期
关键词：
D O I：
10.1116/1.583626
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1410 / 1414
页数：5
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