ELECTRICAL-PROPERTIES OF ANODIC AND PYROLYTIC DIELECTRICS ON GALLIUM-ARSENIDE

被引:88
作者
ZEISSE, CR [1 ]
MESSICK, LJ [1 ]
LILE, DL [1 ]
机构
[1] OCEAN SYST CTR, DIV ELECTR MAT SCI DIVISION, SAN DIEGO, CA 92152 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期
关键词
D O I
10.1116/1.569399
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:957 / 960
页数:4
相关论文
共 9 条
[1]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[2]  
Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
[3]   ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER [J].
HASEGAWA, H ;
HARTNAGEL, HL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :713-723
[4]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[5]   AN INP MIS DIODE [J].
LILE, DL ;
COLLINS, DA .
APPLIED PHYSICS LETTERS, 1976, 28 (09) :554-556
[6]   INP-SIO2 MIS STRUCTURE [J].
MESSICK, L .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4949-4951
[7]   GAAS-SIXOYNZ MIS FET [J].
MESSICK, L .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5474-5475
[8]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
NICOLLIA.EH ;
GOETZBER.A .
BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+
[9]   SURFACE-POTENTIAL AND SURFACE-STATE DENSITY IN ANODIZED GAAS MOS CAPACITORS [J].
SHIMANO, A ;
MORITANI, A ;
NAKAI, J .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :939-940