EFFECTS OF AS4 FLUX ON REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW-TEMPERATURES

被引：21

作者：

IBBETSON, JP ^{[1
]}

MIRIN, RP ^{[1
]}

MISHRA, UK ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports on the observation of reflection high-energy electron diffraction oscillations during growth of GaAs by molecular beam epitaxy at temperatures as low as 60-degrees-C. At low temperatures (<300-degrees-C), the amplitude of the oscillations is shown to be sensitive to the As:Ga flux ratio. The largest amplitude oscillations are observed under stoichiometric conditions.

引用

页码：1050 / 1052

页数：3

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