MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS

被引：46

作者：

ANDERSON, RM ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL DEV CTR,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 11期

关键词：

D O I：

10.1149/1.2403299

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1540 / 1546

页数：7

共 8 条

[1] NEW STRUCTURE OF SPUTTERED TANTALUM [J].

DAS, G .

THIN SOLID FILMS, 1972, 12 (02) :305-&

[2]

DELUCA RD, 1969, SEMICONDUCTOR SILICO

[3] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

MANOLIU, J ;

TUCKER, RN .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[4] ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE SILICON DIOXIDE SILICON STRUCTURES [J].

MAEKAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (09) :1251-&

[5] PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS [J].

MAI, CC ;

WHITEHOUSE, TS ;

THOMAS, RC ;

GOLDSTEIN, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :331-+

[6]

SARACE JC, 1968, SOLID STATE ELECTRON, V11, P553

[7] SILICON-GATE TECHNOLOGY [J].

VADASZ, LL ;

GROVE, AS ;

ROWE, TA ;

MOORE, GE .

IEEE SPECTRUM, 1969, 6 (10) :28-&

[8]

WALKER GA, 1970, J VACUUM SCI TECHNOL, V7, P6

← 1 →