TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING

被引:27
作者
ANGILELLO, J
BAGLIN, JEE
CARDONE, F
DEMPSEY, JJ
DHEURLE, FM
IRENE, EA
MACINNES, R
PETERSSON, CS
SAVOY, R
SEGMULLER, AP
TIERNEY, E
机构
关键词
D O I
10.1007/BF02654902
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:59 / 93
页数:35
相关论文
共 36 条
[21]  
MURARKA SP, 1979, P INT ELECTRON DEVIC, P454
[22]  
PETERSSON CS, 1980, THIN FILM INTERFACES
[23]   REACTION OF THIN METAL-FILMS WITH SIO2 SUBSTRATES [J].
PRETORIUS, R ;
HARRIS, JM ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :667-&
[24]   METAL-NITRIDE-OXIDE-SILICON FIELD-EFFECT TRANSISTORS WITH SELF-ALIGNED GATES [J].
SARACE, JC ;
KERWIN, RE ;
KLEIN, DL ;
EDWARDS, R .
SOLID-STATE ELECTRONICS, 1968, 11 (07) :653-+
[25]  
SCHWARZKOPF P, 1953, REFRACTORY HARD META, P333
[26]  
SEGMULLER A, UNPUBLISHED
[27]   ROLE OF HYDROGEN IN SPUTTERING OF NICKEL-CHROMIUM FILMS [J].
STERN, E ;
CASWELL, HL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (03) :128-&
[28]  
TSAI MY, UNPUBLISHED
[29]  
TU KN, 1978, THIN FILMS INTERDIFF, P305
[30]  
van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1