EFFECT OF STRUCTURE AND IMPURITIES ON THE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：34

作者：

FOTI, G ^{[1
]}

BEAN, JC ^{[1
]}

POATE, JM ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 10期

关键词：

D O I：

10.1063/1.91356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：840 / 842

页数：3

共 12 条

[1]

ASPNES DE, 1979, ELECTROCHEMICAL SOC

[2] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[3] OPTICAL EVIDENCE FOR A NETWORK OF CRACKLIKE VOIDS IN AMORPHOUS GERMANIUM [J].

GALEENER, FL .

PHYSICAL REVIEW LETTERS, 1971, 27 (25) :1716-&

[4] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[5]

KENNEDY EF, 1977, J APPL PHYS, V48, P4234

[6]

LAU SS, 1978, THIN FILMS INTERDIFF

[7]

MAGEE CJ, UNPUBLISHED

[8] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J].

MAGEE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :660-663

[9] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS [J].

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1979, 42 (17) :1151-1154

[10]

PHILLIPS JC, 1979, 8TH AM SEM C CAMBR

← 1 2 →