STRAINED QUANTUM-WELL INGASB/ALGASB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
KLEM, JF
LOTT, JA
SCHIRBER, JE
KURTZ, SR
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strained, modulation-doped InGaSb/AlGaSb quantum wells were grown on InP substrates by molecular beam epitaxy and characterized by magneto-transport measurements. Hole transport properties were strongly correlated with growth conditions. Shubnikov-de Haas measurements yielded a hole mass of (0.15 +/- 0.02) m(O), and hole mobilities as high as 3300 cm2/Vs were obtained at 77K, with a density of 1.6 x 10(12) cm-2, thus showing promise for p-type field-effect transistor applications.
引用
收藏
页码：79 / 82
页数：4
相关论文
共 50 条
  • [1] STRAINED QUANTUM-WELL MODULATION-DOPED INGASB/ALGASB STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    KLEM, JF
    LOTT, JA
    SCHIRBER, JE
    KURTZ, SR
    LIN, SY
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (03) : 315 - 321
  • [2] STRAIN EFFECTS IN INGASB/ALGASB QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    KURAMOCHI, E
    TAKANASHI, Y
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5706 - 5711
  • [3] WAVELENGTH CONTROL AND RESIDUAL OXYGEN IN ALGAAS/INGAAS STRAINED QUANTUM-WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    CHAND, N
    FITZGERALD, EA
    GEVA, M
    APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2893 - 2895
  • [4] CHARACTERIZATION OF STRAINED GAINAS/AIINAS QUANTUM-WELL TEGFETS GROWN BY MOLECULAR-BEAM EPITAXY
    GRIEM, HT
    HSIEH, KH
    DHAENENS, IJ
    DELANEY, MJ
    HENIGE, JA
    WICKS, GW
    BROWN, AS
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 383 - 390
  • [5] STRAINED ALGAINAS/ALGAAS QUANTUM-WELLS AND QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    OKEEFE, SS
    SCHAFF, WJ
    EASTMAN, LF
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (07) : 738 - 740
  • [6] Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy
    Zhang, DH
    Shi, W
    Zhang, PH
    Yoon, SF
    Shi, X
    APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1570 - 1572
  • [7] Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
    Tournié, E
    Pinault, MA
    Vézian, S
    Massies, J
    Tottereau, O
    APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2189 - 2191
  • [8] DELTA-DOPED QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    LIU, DG
    LEE, CP
    CHANG, KH
    WU, JS
    LIOU, DC
    APPLIED PHYSICS LETTERS, 1990, 57 (18) : 1887 - 1888
  • [9] ALGASB/GASB DIODES GROWN BY MOLECULAR-BEAM EPITAXY
    LONGENBACH, KF
    WANG, WI
    APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1117 - 1119
  • [10] Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
    Abramkin, D. S.
    Petrushkov, M. O.
    Emelyanov, E. A.
    Nenashev, A. V.
    Yesin, M. Yu.
    Vasev, A. V.
    Putyato, M. A.
    Bogomolov, D. B.
    Gutakovskiy, A. K.
    Preobrazhenskiy, V. V.
    SEMICONDUCTORS, 2021, 55 (02) : 194 - 201
12345