GROWTH TEMPERATURE-DEPENDENT ATOMIC ARRANGEMENTS AND THEIR ROLE ON BAND-GAP OF INGAAIP ALLOYS GROWN BY MOCVD

被引：66

作者：

NOZAKI, C

OHBA, Y

SUGAWARA, H

YASUAMI, S

NAKANISI, T

机构：

[1] Toshiba Corp, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Electrons--Diffraction - Indium and Alloys - Photoluminescence;

D O I：

10.1016/0022-0248(88)90560-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Detailed observation of atomic arrangement in In0.5(Ga1-xAlx)0.5P (0&lex&le1) grown by MOCVD with a wide range of growth temperatures Tg (570-770°C) was carried out using electron diffraction and high resolution transmission electron microscopy. A correlation between the atomic arrangement and band-gap energy was studied by photoluminescence and photoacoustic spectroscopy. For Tg&le760°C, the epitaxial layers have ordered structures. For Tg≥770°C, the ordering disappear. Shifts in the band-gap depend on the density of the ordered layers for x&le0.5. For x≥0.5, the band-gap is not affected by the ordering.

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页码：406 / 411

页数：6

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