STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA

[1] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[4] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[5] FROST HJ, 1982, DEFORMATION MECHANIS

[6] DISLOCATION MOBILITY MEASUREMENTS - AN ESSENTIAL TOOL FOR UNDERSTANDING THE ATOMIC AND ELECTRONIC CORE STRUCTURES OF DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 51 - 60

[7] Nabarro F. R., 1967, THEORY CRYSTAL DISLO

[8] ON THE YIELD-POINT OF FLOATING-ZONE SILICON SINGLE-CRYSTALS .1. YIELD STRESSES AND ACTIVATION PARAMETERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (05): : 601 - 616

[9] MACROSCOPIC PLASTIC PROPERTIES OF DISLOCATION-FREE GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS .1. YIELD BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2788 - &

[10] YIELD BEHAVIOR OF DISLOCATION-FREE GERMANIUM FROM 500 DEGREES C TO VICINITY OF MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3087 - &

[1] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[4] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 852 - 852

[5] FROST HJ, 1982, DEFORMATION MECHANIS

[6] DISLOCATION MOBILITY MEASUREMENTS - AN ESSENTIAL TOOL FOR UNDERSTANDING THE ATOMIC AND ELECTRONIC CORE STRUCTURES OF DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 51 - 60

[7] Nabarro F. R., 1967, THEORY CRYSTAL DISLO

[8] ON THE YIELD-POINT OF FLOATING-ZONE SILICON SINGLE-CRYSTALS .1. YIELD STRESSES AND ACTIVATION PARAMETERS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (05): : 601 - 616

[9] MACROSCOPIC PLASTIC PROPERTIES OF DISLOCATION-FREE GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS .1. YIELD BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2788 - &

[10] YIELD BEHAVIOR OF DISLOCATION-FREE GERMANIUM FROM 500 DEGREES C TO VICINITY OF MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3087 - &