GA1-YINYAS/INASXP1-X (Y-GREATER-THAN-0.53, X-GREATER-THAN-0) PIN PHOTODIODES FOR LONG WAVELENGTH REGIONS (LAMBDA-GREATER-THAN-2-MU-M) GROWN BY HYDRIDE VAPOR-PHASE EPITAXY

被引：19

作者：

MAKITA, K ^{[1
]}

TORIKAI, T ^{[1
]}

ISHIHARA, H ^{[1
]}

TAGUCHI, K ^{[1
]}

机构：

[1] NEC CORP,DIV COMPOUND SEMICOND DEVICE,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 07期

关键词：

D O I：

10.1049/el:19880256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 380

页数：2

共 7 条

[1]

ALBRECHT H, 1983, JPN J APPL PHYS, V22, pL364

[2] HIGH-TEMPERATURE AGING TESTS ON PLANAR STRUCTURE INGAAS INP PIN PHOTODIODES WITH TI/PT AND TI/AU CONTACT [J].

ISHIHARA, H ;

MAKITA, K ;

SUGIMOTO, Y ;

TORIKAI, T ;

TAGUCHI, K .

ELECTRONICS LETTERS, 1984, 20 (16) :654-656

[3] OXYGEN ADDITION PURIFICATION EFFECT IN INGAAS GROWTH BY HYDRIDE VPE [J].

MAKITA, K ;

TAGUCHI, K ;

USUI, A .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :613-615

[4]

MIZUTANI T, 1983, JPN J APPL PHYS, V22, pL364

[5] INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS [J].

OLSEN, GH .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :223-239

[6] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES [J].

SAXENA, RR ;

HYDER, SB ;

GREGORY, PE ;

ESCHER, JS .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (02) :481-484

[7] HIGH-SPEED PLANAR-STRUCTURE INP INGAASP INGAAS AVALANCHE PHOTODIODE GROWN BY VPE [J].

SUGIMOTO, Y ;

TORIKAI, T ;

MAKITA, K ;

ISHIHARA, H ;

MINEMURA, K ;

TAGUCHI, K ;

IWAKAMI, T .

ELECTRONICS LETTERS, 1984, 20 (16) :653-654

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