ARGON-ION IMPLANTATION DAMAGE STUDIES IN SILICON SCHOTTKY BARRIERS USING ANODIC-OXIDATION ETCHING

被引：18

作者：

CHIEN, HC ^{[1
]}

ASHOK, S ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2886 / 2892

页数：7

共 26 条

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