SYNTHESIS OF ORIENTED TEXTURED DIAMOND FILMS ON SILICON VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION

Oriented diamond films were achieved on Si(001) and Si(111) substrates via hot filament chemical vapor deposition (HFCVD) with the orientation relationship of dia[110]/Si[110] and dia(001)/Si(001) for Si(001), and of dia(1(1) over bar0$)/Si(1(1) over bar0$) and dia(111)/Si(111) for Si(111). The substrates were negatively biased relative to the filament during the nucleation stage. The as-grown films were characterized by scanning electron microscopy (SEM) and Raman spectroscopy. The role of negative bias is discussed in light of the differences between HFCVD and microwave plasma CVD. In conclusion, the importance of the electron emission from the diamond coating on the substrate holder is highlighted, while the ion bombardment is eliminated as a main factor based on our experiments. (C) 1995 American Institute of Physics.