PREPARATION OF PBTIO3 FILMS UTILIZING SELF-CONTROL MECHANISM OF STOICHIOMETRIC COMPOSITION IN DUAL-BEAM VACUUM EVAPORATION METHOD

被引：15
作者：
UENO, S
ISHIWARA, H
机构：
[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期
关键词：
VACUUM EVAPORATION METHOD; PBTIO3; FILM; SELF-CONTROL MECHANISM; EPITAXIAL GROWTH; SI;
D O I：
10.1143/JJAP.31.2982
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optimum conditions for preparing PbTiO3 films on Si and SrTiO3 substrates are investigated in the dual-beam vacuum evaporation method using PbO and TiO2. It has been found that tetragonal PbTiO3 films are formed on Si substrates at temperatures ranging from 550-degrees-C to 600-degrees-C, and that the stoichiometric composition of the films is easily obtained at 600-degrees-C by supplying excess PbO molecules to the substrate. It has also been found that PbTiO3 films grow epitaxially on SrTiO3 substrates at temperatures around 550-degrees-C.
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页码：2982 / 2984
页数：3
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