HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON

被引：30
|
作者：
LO, GQ
KWONG, DL
FAZAN, PC
MATHEWS, VK
SANDLER, N
机构：
[1] MICRON SEMICOND INC,BOISE,ID 83706
[2] LAM RES CORP,FREMONT,CA 94538
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期
关键词：
D O I：
10.1109/55.215172
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on a highly reliable stacked storage capacitor with ultrahigh capacitance using rapid-thermal-annealed LPCVD-Ta2O5 films (approximately 100 angstrom) deposited on NH3-nitrided rugged poly-Si electrodes. The capacitances as high as 20.4 fF/mum2 (corresponding to the thinnest t(ox,eff) of 16.9 angstrom ever reported using LPCVD-Ta2O5 and poly-Si technologies) have been achieved with excellent leakage current and TDDB characteristics. Extensive electrical characterization over wide temperature range (approximately 25-300-degrees-C) shows that the Ta2O5 films on rugged poly-Si electrodes have a better temperature stability in dielectric leakage and breakdown compared to the films on smooth poly-Si electrodes.
引用
收藏
页码：216 / 218
页数：3
相关论文
共 50 条
  • [1] TA2O5 PLASMA CVD TECHNOLOGY FOR DRAM STACKED CAPACITORS
    NUMASAWA, Y
    KAMIYAMA, S
    ZENKE, M
    SAKAMOTO, M
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 43 - 46
  • [2] Effect of the metal electrode on the characteristics of Ta2O5 capacitors for DRAM applications
    Atanassova, E.
    Spassov, D.
    Paskaleva, A.
    2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 581 - +
  • [3] Comparison of PECVD-WNx and CVD-TiN films for the upper electrode of Ta2O5 capacitors
    Park, BL
    Lee, MB
    Moon, KJ
    Lee, HD
    Kang, HK
    Lee, MY
    PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 1998, : 96 - 98
  • [4] STACKED CAPACITOR DRAM PROCESS USING PHOTO-CVD TA2O5 FILM
    YAMAGISHI, K
    AOKI, H
    ONO, S
    SHIMIZU, H
    MATSUI, M
    TARUI, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2439 - 2439
  • [5] Permittivity Enhancement of Ta2O5/Co/Ta2O5 Trilayer Films
    Ding, Y.
    Yao, Y. D.
    Wu, K. T.
    Hsu, J. C.
    Hung, D. S.
    Wei, D. H.
    Lin, Y. H.
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 710 - 713
  • [6] Thermal Ta2O5 films as a gate insulator for thin film capacitors
    Spassov, D
    Atanassova, E
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1998, 84 (05) : 453 - 466
  • [7] High capacitance and low leakage Ta2O5 MIM capacitor for DRAM
    Li, WM
    Sandhu, GS
    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I, 2003, 2002 (28): : 251 - 261
  • [8] Ti doped Ta2O5 stacked capacitors
    Atanassova, E.
    Spassov, D.
    Paskaleva, A.
    Georgieva, M.
    Koprinarova, J.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (10): : 1509 - 1512
  • [9] VARIATION OF CONDUCTIVITY OF TA2O5 IN ELECTROLYTIC CAPACITORS
    BURNHAM, J
    IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1966, PMP2 (04): : 114 - &
  • [10] Ti doped Ta2O5 stacked capacitors
    Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
    J. Optoelectron. Adv. Mat., 2009, 10 (1509-1512):
12345