INTERNAL PHOTOEMISSION AND BAND DISCONTINUITIES AT GA0.47IN0.53AS-INP HETEROJUNCTIONS

被引：20

作者：

HAASE, MA

PAN, N

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 15期

关键词：

D O I：

10.1063/1.100696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1457 / 1459

页数：3

共 21 条

[1] PHOTOLUMINESCENCE MEASUREMENTS OF BAND DISCONTINUITY IN INP-INGAP AS HETEROSTRUCTURES
BRUNEMEIER, PE
DEPPE, DG
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 755 - 757
[2] BRUNEMEIER PE, 1985, THESIS U ILLINOIS UR
[3] INTERFACE GRADING IN INGAASP LIQUID-PHASE EPITAXIAL HETEROSTRUCTURES
COOK, LW
FENG, M
TASHIMA, MM
BLATTNER, RJ
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 173 - 175
[4] AN N-IN0.53GA0.47AS-N-INP RECTIFIER
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
[5] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[6] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
[7] BAND DISCONTINUITIES IN GAAS/ALXGA1-XAS HETEROJUNCTION PHOTODIODES
HAASE, MA
EMANUEL, MA
SMITH, SC
COLEMAN, JJ
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 404 - 406
[8] THEORY OF SURFACE STATES
HEINE, V
[J]. PHYSICAL REVIEW, 1965, 138 (6A): : 1689 - &
[9] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS
LANG, DV
PANISH, MB
CAPASSO, F
ALLAM, J
HAMM, RA
SERGENT, AM
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 736 - 738
[10] THE DETERMINATION O HETEROJUNCTION ENERGY-BAND DISCONTINUITIES IN THE PRESENCE OF INTERFACE STATES USING CAPACITANCE-VOLTAGE TECHNIQUES
LEU, LY
FORREST, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 5030 - 5040

← 1 2 3 →